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ON Semiconductor Introduces New Industrial and Automotive Qualified SiC MOSFETs Complementing a Growing Ecosystem and Bringing Wide Band Gap Performance Benefits to Rapid Growth Applications

March 18, 2019

ANAHEIM, Calif.--(BUSINESS WIRE)--Mar 18, 2019--APEC 2019 – Booth #611 – ON Semiconductor (Nasdaq: ON), driving energy efficient innovations, has introduced two new silicon carbide (SiC) MOSFET devices. The industrial grade NTHL080N120SC1 and AEC-Q101 automotive grade NVHL080N120SC1 bring the enabling, wide-ranging performance benefits of wide band gap technology to important high growth end application areas such as Automotive DCDC and onboard charger applications for electric vehicles as well as solar, and uninterruptible and server power supplies.

The announcement sees the strengthening of ON Semiconductor’s comprehensive and growing SiC ecosystem that features complementary devices including SiC diodes and SiC drivers, plus vital resources such as device simulation tools, SPICE models and application information to help design and systems engineers meet their high frequency circuit development challenges.

ON Semiconductor’s 1200 volt (V), 80 milliohm (mΩ), SiC MOSFETs are rugged and align with the needs of modern high frequency designs. They combine high power density with highly efficient operation that can significantly reduce operating costs and overall system size due to smaller device footprints. These characteristics also mean less thermal management is required, further reducing bill of materials (BoM) costs, size and weight.

Key features and associated design benefits of the new devices include class-leading low leakage current, a fast intrinsic diode with low reverse recovery charge, which gives steep power loss reduction and supports higher frequency operation and greater power density, and low Eon and Eoff / fast turn ON and OFF combined with low forward voltage to reduce total power losses and therefore cooling requirements. Low device capacitance supports the ability to switch at very high frequencies which reduces troublesome EMI issues; meanwhile, higher surge, avalanche capability, and robustness against short-circuits enhances overall ruggedness, gives improved reliability and longer overall life expectancy.

A further unique benefit of ON Semiconductor’s new SiC MOSFET devices is a patented termination structure that adds to reliability and ruggedness and enhances operational stability. The NVHL080N120SC1 has been designed to withstand high surge currents and offers high avalanche capability and robustness against short circuits. The AEC-Q101 qualification of the MOSFET plus other SiC devices offered, ensures they can be fully utilized in the growing number of in-vehicle applications emerging as a result of increasing electronic content and electrification of powertrains. A maximum operating temperature of 175°C enhances suitability for use in automotive designs as well as other target applications where high density and space constraints are pushing up typical ambient temperatures.

Commenting on the introduction of new SiC MOSFET devices and the overall enhancement of ON Semiconductor’s wide band gap ecosystem, Gary Straker, Vice President and General Manager, Power MOSFET Division, Power Solutions Group, ON Semiconductor, said: “Increasingly, the most important applications and current mega trends demand all-round performance beyond that of regular silicon devices. ON Semiconductor’s comprehensive SiC portfolio, enhanced by the introduction of these two new MOSFETs and supported by an ecosystem of tools and resources, means that not only can we provide the complete wide band gap component solution, but that we can lead engineers through the development and design-in process to achieve a solution that performs to expectations, is cost-effective and has reliability coupled with longevity.”

ON Semiconductor’s SiC devices and solutions will be on display at this year’s APEC in Anaheim, CA, and the company plans on launching further wide band gap devices throughout 2019.

Additional resources & documents:

Landing page: Wide Band Gap
White paper: SiC MOSFETs: Gate Drive Optimization

About ON Semiconductor

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient, power management, analog, sensors, logic, timing, connectivity, discrete, SoC and custom devices. The company’s products help engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, medical, aerospace and defense applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, a robust compliance and ethics program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe and the Asia Pacific regions. For more information, visit http://www.onsemi.com.

ON Semiconductor and the ON Semiconductor logo are registered trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the company references its website in this news release, information on the website is not to be incorporated herein.

View source version on businesswire.com:https://www.businesswire.com/news/home/20190318005237/en/

CONTACT: Noriko Fujiwara

Media Relations

ON Semiconductor

+1 (602) 244-5986

Noriko.fujiwara@onsemi.comParag Agarwal

Vice President Investor Relations and Corporate Development

ON Semiconductor

+1 (602) 244-3437

parag.agarwal@onsemi.com

KEYWORD: UNITED STATES NORTH AMERICA CALIFORNIA

INDUSTRY KEYWORD: ENERGY ALTERNATIVE ENERGY TECHNOLOGY HARDWARE SEMICONDUCTOR MANUFACTURING AUTOMOTIVE MANUFACTURING ENGINEERING ALTERNATIVE VEHICLES/FUELS AUTOMOTIVE OTHER AUTOMOTIVE

SOURCE: ON Semiconductor

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PUB: 03/18/2019 01:00 PM/DISC: 03/18/2019 01:00 PM

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