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EPC Introduces 100 V eGaN® Power Transistor – 30 Times Smaller Than Comparable Silicon and Capable of 97% Efficiency at 500 kHz

September 11, 2018

EL SEGUNDO, Calif.--(BUSINESS WIRE)--Sep 11, 2018--Efficient Power Conversion ( EPC ) announces the EPC2051, a 100 V GaN transistor with a maximum R DS(on) of 25 mΩ and a 37 A pulsed output current for high efficiency power conversion in a tiny 1.1mm 2 footprint.

Applications demanding higher efficiency and power density no longer have to choose between size and performance. The EPC2051 measures just 1.30 mm x 0.85 mm (1.1 mm 2 ). Despite the small footprint, operating in a 50 V – 12 V buck converter, the EPC2051 achieves 97% efficiency at a 4 A output while switching at 500 kHz. In addition, the low cost of the EPC2051 brings the performance of GaN FETs at a price comparable to silicon MOSFETs. Applications benefiting from this performance, small size, and low cost include 48 V input power converters for computing and telecom systems, LiDAR, LED Lighting, and Class-D audio.

“The ability of eGaN based power devices to operate efficiently at high frequency widens the performance and cost gap with silicon. The 100 V, EPC2051, is 30 times smaller than the closest silicon MOSFET,” said Alex Lidow, EPC’s CEO.

Development Board

The EPC9091 development board is a 100 V maximum device voltage, half bridge featuring the EPC2051, and the UP1966A gate driver from uPI Semiconductor. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the 100 V EPC2051 eGaN FET.

Price and Availability

The EPC2051 eGaN FET is priced for 1K units at $0.67 each and $0.37 in 100K volumes and the EPC9091 development board is priced at $118.75 each.

Both products are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Visit our web site: www.epc-co.com

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

View source version on businesswire.com:https://www.businesswire.com/news/home/20180911005150/en/

CONTACT: Efficient Power Conversion

Joe Engle, 310.986.0350

joe.engle@epc-co.com

KEYWORD: UNITED STATES NORTH AMERICA CALIFORNIA

INDUSTRY KEYWORD: TECHNOLOGY HARDWARE SEMICONDUCTOR MANUFACTURING ENGINEERING

SOURCE: Efficient Power Conversion

Copyright Business Wire 2018.

PUB: 09/11/2018 09:00 AM/DISC: 09/11/2018 09:01 AM

http://www.businesswire.com/news/home/20180911005150/en

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