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GT Advanced Technologies Chief Technology Officer Among Industry Leaders at International Forum on Wide Bandgap Semiconductors

November 14, 2018

HUDSON, N.H.--(BUSINESS WIRE)--Nov 14, 2018--GT Advanced Technologies (“ GTAT ”) Chief Technology Officer, Dr. P.S. Raghavan was an invited speaker at the 2018 International Forum on Wide Bandgap Semiconductors, held in Shenzhen, China from October 23-25.

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Dr. P.S. Raghavan (third from right), Chief Technology Officer of GT Advanced Technologies, pictured at the 2018 International Forum on Wide Bandgap Semiconductors in Shenzen, China. (Photo: Business Wire)

The event is an annual global forum to promote collaborative innovation between all facets of the semiconductor industry. It attracts high-level professionals across wide bandgap semiconductor materials, equipment, devices and related applications.

Dr. Raghavan presented during both a tutorial session and a technical session covering different wide bandgap semiconducting materials, with specific focus on silicon carbide. During these sessions, Dr. Raghavan elaborated on the issues associated with silicon carbide as well as provided an analysis of the current status of the broader semiconductor industry.

Program co-chair G.Q. Zhang, professor of Micro/nanoelectronics, System Integration and Reliability (MSI&R) at Delft University of Technology, said, “The tutorial and technical sessions by Dr. Raghavan highlighted the developments in wideband gap semiconductors and the growing importance of silicon carbide in this industry. It is great to see the progress GT Advanced Technologies has made in overcoming hurdles related to the material.”

For the tutorial session, Dr. Raghavan gave an overview of different wide bandgap semiconducting materials with emphasis on silicon carbide. He spoke about the issues associated with the material, including crystal growth techniques, challenges with mass production, the wafering processes and wafer geometry optimization.

During the technical session, Dr. Raghavan detailed the challenges of silicon carbide crystal growth, recent progress in silicon carbide substrate technology, and the need for further improvements of quality and control of silicon carbide crystal growth.

The sessions also included talks from several notable global leaders in the semiconductor industry.

The IFWS is an annual forum and is held in conjunction with the China International Forum on Solid-State Lighting (“ SSLCHINA ”). SSLCHINA is another large-scale, global forum held in high regard in the solid-state lighting industry.

About GTAT Corporation

GTAT Corporation is a diversified technology company producing advanced materials and innovative crystal growth technology for the solar, power electronics and optoelectronics industries. The Company’s technical innovations accelerate the growth of a new generation of products across this diversified set of global markets. For more information about the company, please visit  www.gtat.com.

View source version on businesswire.com:https://www.businesswire.com/news/home/20181114005098/en/

CONTACT: Media:

Rich Myers

rmyers@profileadvisors.com

646-538-7904

KEYWORD: UNITED STATES ASIA PACIFIC NORTH AMERICA CHINA NEW HAMPSHIRE

INDUSTRY KEYWORD: ENERGY ALTERNATIVE ENERGY OIL/GAS UTILITIES TECHNOLOGY SEMICONDUCTOR MANUFACTURING CHEMICALS/PLASTICS

SOURCE: GTAT Corporation

Copyright Business Wire 2018.

PUB: 11/14/2018 09:00 AM/DISC: 11/14/2018 09:01 AM

http://www.businesswire.com/news/home/20181114005098/en

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